Toshiba LED spotlights light up the night view of Hangzhou West Lake

In June of this year, Toshiba officially launched the "LED Outdoor Spotlight" specially developed for Hangzhou West Lake Night Lighting Energy Saving Reconstruction Project. In this lighting renovation, Toshiba LED outdoor spotlights (1W) replaced the original PAR20 spotlights (50W) for night lighting of ancient architectural roofs in the scenic area. The project covers two scenic spots of “Lone Mountain” and “Beishan Street” in the West Lake, involving ancient buildings in all scenic spots such as Pinghu Qiuyue, Fanghe Pavilion, Qingxueyu, Yulou, and the broken bridge.

Toshiba LED lamps used in West Lake night lighting have significantly reduced energy consumption compared to before the renovation. If the daily lighting is 5 hours, the annual consumption of 400,000 kWh can be reduced, and the product life can reach 40,000 hours, which is equivalent to more than 20 years of sustainable use without the need to replace the light source, that is, the purpose of reducing the environmental load is also achieved. Minimizes ongoing maintenance costs. In addition, its low UV characteristics also make the building not fading and damage due to irradiation, providing a safe, secure and lasting "environmental harmony lighting" for the West Lake cultural heritage. At the same time, Toshiba LED lighting professional light distribution design and excellent optical performance, so that the ancient architecture in the night re-emerges the elegant temperament, and the beautiful natural scenery, showing the picturesque West Lake night scene.

Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors.

P Channel Mosfet

P Channel Mosfet,P Channel Power Mosfet,Field Effect Transistor,Field Effect Transistor Symbol

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